Measurement of the electrically induced refractive index change in silicon for wavelength λ=1.3 μm using a Schottky diode
- 15 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (3) , 212-214
- https://doi.org/10.1063/1.102834
Abstract
We report the results of measurements of the electrically induced refractive index change caused by the free-carrier effect in a silicon Schottky diode. We find that for the wavelength λ=1.3 μm, the real part of the refractive index changes by as much as ‖Δn‖∼0.01 for current densities less than 1 A/cm2. This refractive index change produced changes in the input-coupling efficiency as large as 75% in our sample geometry.Keywords
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