Infrared photodetection in proton-bombarded InP

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Abstract
We demonstrated photodetection in proton-bombarded InP at wavelengths well below the normal band edge of InP (hν<Eg). We used p-type substrates. The proton bombardment served two functions: (1) it converted the bombarded layer into n type, thus, forming p-n photodiodes reported in this letter, and (2) it produced a broad band of absorption extending below the band edge which made photodetection in the infrared possible. Responses up to wavelength of 1.52 μm, a dark current of 3 nA at a bias of −10 V, and a transient response of less than 100 ps (full width at half-maximum) at 1.06 μm have been observed.

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