Effect of statistical fermi level shift on the Meyer-Neldel rule of a-Si:H conductivity
- 1 May 1986
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 81 (3) , 261-270
- https://doi.org/10.1016/0022-3093(86)90495-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Effect of the surface condition on the conductance of hydrogenated amorphous siliconJournal of Applied Physics, 1984
- Electron transport in amorphous semiconductorsJournal of Non-Crystalline Solids, 1984
- Doping effects in amorphous siliconJournal of Non-Crystalline Solids, 1984
- Charge injection into SiO2 during field effect and photo-field-effect measurements in hydrogenated amorphous siliconJournal of Applied Physics, 1984
- Fermi-level effects in-Si:H photoconductivityPhysical Review B, 1983
- Estimation of localized state distribution profiles in undoped and doped a-Si:H by measuring space-charge-limited currentSolid State Communications, 1982
- Characterized of glow-discharge deposited a-Si:HSolar Energy Materials, 1980
- A new approach to the interpretation of transport results in a-SiPhilosophical Magazine Part B, 1980