Charge injection into SiO2 during field effect and photo-field-effect measurements in hydrogenated amorphous silicon
- 15 January 1984
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (2) , 440-445
- https://doi.org/10.1063/1.333091
Abstract
It is shown that electron and hole trapping in vitreous quartz occurs when fields larger than 105 V/cm are applied across the insulator of glow‐discharge deposited amorphous silicon (a‐Si:H) field effect devices. The trapping of charges of both polarities is enhanced by light having energy less than 2 eV. The charge trapping reduces the field effect and the photo‐field‐effect of a‐Si:H at large gate voltages. It is found that strong illumination does not eliminate the effect of accumulation layers on the photoconductivity.This publication has 21 references indexed in Scilit:
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