Surface kinetic processes and the morphology of equilibrium GaAs(100) surfaces: A Monte Carlo study
- 29 February 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (9) , 723-725
- https://doi.org/10.1063/1.99359
Abstract
The morphological behavior of model static surfaces of compound semiconductors, as well as dynamic growth fronts relaxing towards their equilibrium behavior upon termination of growth, is studied via Monte Carlo simulations based upon the configuration-dependent reactive incorporation model. It is found that anion desorption, cation migration, and surface reconstruction play a crucial role in controlling the surface morphology and their interplay can explain the experimentally observed dependence of morphology on the substrate temperature.Keywords
This publication has 12 references indexed in Scilit:
- The nature of molecular beam epitaxial growth examined via computer simulationsCritical Reviews in Solid State and Materials Sciences, 1988
- Examination of the nature of lattice matched III–V semiconductor interfaces using computer simulated molecular beam epitaxial growth I. AC/BC interfacesJournal of Crystal Growth, 1987
- Atomic structure of GaAs(100)-(2×1) and (2×4) reconstructed surfacesJournal of Vacuum Science & Technology A, 1987
- A combined computer simulation, RHEED intensity dynamics and photoluminescence study of the surface kinetics controlled interface formation in MBE grown GaAs/AlxGa1−xAs(100) quantum well structuresJournal of Crystal Growth, 1987
- Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam EpitaxyMRS Proceedings, 1987
- The temporal behaviour of reflection-high-energy-electron-diffraction intensity and implications for growth kinetics during molecular beam epitaxial growth of GaAs/AlxGa1−xAs(100) modulated structuresSurface Science, 1986
- Role of Surface Molecular Reactions in Influencing the Growth Mechanism and the Nature of Nonequilibrium Surfaces: A Monte Carlo Study of Molecular-Beam EpitaxyPhysical Review Letters, 1986
- Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanismsJournal of Vacuum Science & Technology B, 1985
- Implications of the configuration-dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III-V molecular beam epitaxial growth and the dynamics of the reflection high-energy electron diffraction intensityApplied Physics Letters, 1985
- Monte-Carlo simulations of MBE growth of III–V semiconductors: The growth kinetics, mechanism, and consequences for the dynamics of RHEED intensityJournal of Vacuum Science & Technology B, 1985