The temporal behaviour of reflection-high-energy-electron-diffraction intensity and implications for growth kinetics during molecular beam epitaxial growth of GaAs/AlxGa1−xAs(100) modulated structures
- 3 August 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 174 (1-3) , 55-64
- https://doi.org/10.1016/0039-6028(86)90385-7
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
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