Laser application of Pb1-xSrxS films prepared by hot wall epitaxy
- 1 March 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (3S) , S334-S337
- https://doi.org/10.1088/0268-1242/5/3s/075
Abstract
Pb1-xSrxS films and Pb1-xSrxS/PbS double-heterostructure lasers were prepared using a hot wall epitaxy technique. Pb1-xSrxS films with energy band gaps up to 1.1 eV (x=0.15) were obtained. The band gap increased very rapidly with the SrS content as dEg/dx=7.5 eV (xPbS. Impurity dopings were performed and electrical properties were measured for the Pb1-xSrxS films. Films with large p- or n-type concentrations were obtained by doping with Tl or Bi impurities. Pb1-xSrxS/PbS double-hetero diode lasers with broad area and stripe contacts were fabricated. Laser operations were obtained up to 210 K pulsed for the broad-area laser and 245 K pulsed (174 K cw) for the stripe contact laser around 3 mu m.Keywords
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