Localized Defects in Semiconductors
- 1 January 1973
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Hyperfine Structure of the Neutral () Vacancy-Oxygen Center in Ion-Implanted SiliconPhysical Review B, 1972
- Electron Paramagnetic Resonance of the Neutral () One- Vacancy-Oxygen Center in Irradiated SiliconPhysical Review B, 1971
- Defects in silicon: Concepts and correlationsRadiation Effects, 1971
- Charge-State Effects in Displacement Damage Invited PaperIEEE Transactions on Nuclear Science, 1971
- 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the DivacancyPhysical Review B, 1966
- Investigations of Oxygen-Defect Interactions between 25 and 700°K in Irradiated GermaniumPhysical Review B, 1965
- Angular Distributions of (α, n) Reaction son Be and CJournal of the Physics Society Japan, 1963
- Defects in Irradiated Silicon. II. Infrared Absorption of the Si-CenterPhysical Review B, 1961
- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961
- Infrared Absorption of Oxygen in SiliconPhysical Review B, 1957