Picosecond Time-Resolved Optical Studies of Plasma Formation and Lattice Heating in Silicon
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Time-resolved studies of reflectivity and transmission at 0.532 μm, 1.064 vm and 2.8 μm of thin silicon films following irradiation with ps pulses at 0.532 μm have been performed. The formation of the electron-hole plasma and the evolution of lattice temperature is investigated as a function of pump fluence and time delay. Quantitative determination of the plasma densities and lattice temperature up to the melting temperature shows that the maximum plasma density is limited to ∼ 1 × 1021 cm−3 by Auger recombination even on a time scale of picoseconds at fluences sufficient to cause the phase transition. The thermal nature of the phase transition is confirmed.Keywords
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