The Effect of Current Pulse Annealing on the Electrical Properties of Polycrystalline p-Si
- 1 January 2005
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 39 (2) , 177-181
- https://doi.org/10.1134/1.1864194
Abstract
The effect of current pulse annealing on the conductivity, hole density and mobility, and piezoresistance of polycrystalline Si is studied. Series of current pulses were used during annealing, which made it possible to reduce the threshold current density. After the pulse annealing, the hole density remained unchanged but the mobility increased. Furthermore, the magnitudes of longitudinal and transverse strain sensitivity decreased. The decrease in strain sensitivity after pulse annealing cannot be explained in terms of the existing model of current annealing.Keywords
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