Formation of Microcrystalline Silicon film by RMS Process
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
We have deposited microcrystalline, gc-Si, silicon films by using RF reactive magnetron sputtering (RMS) at high substrate temperatures, Ts > 500°C, and at a relatively low partial pressure of hydrogen, PH = 0.40 mTorr, and at low Ts ∼200- 300°C, but with a higher PH > 2 mTorr. We have detected μc-crystallinity by Raman scattering and transmission electron microscopy. We discuss differences in the growth mechanisms for formation of μc-Si under these two deposition conditions.Keywords
This publication has 10 references indexed in Scilit:
- Properties of intrinsic and doped a-Si:H deposited by remote plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1988
- High photoconductivity in dual magnetron sputtered amorphous hydrogenated silicon and germanium alloy filmsApplied Physics Letters, 1984
- Structure Change of Microcrystalline Silicon Films in Deposition ProcessJapanese Journal of Applied Physics, 1984
- Solid-phase-epitaxial growth and formation of metastable alloys in ion implanted siliconJournal of Vacuum Science & Technology B, 1983
- Microcrystalline formation in sputtered a-Si: H filmsSolid State Communications, 1983
- Quelques résultats théoriques sur l'étude par R.M.N. des fluides polyatomiques plansJournal de Physique Lettres, 1981
- Low-temperature crystallization of doped a-Si:H alloysApplied Physics Letters, 1980
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H FilmsJapanese Journal of Applied Physics, 1980
- Properties of heavily doped GDSi with low resistivityJournal of Non-Crystalline Solids, 1979
- The preparation of thin layers of Ge and Si by chemical hydrogen plasma transportSolid-State Electronics, 1968