Scaling and dielectric stress compensation of ultrasensitive boron-doped silicon microstructure
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The scaling of boron-doped silicon membranes based on diaphragm dimensions and stress compensation is characterized. Devices with varying edge length and plate thickness are fabricated and tested for sensitivity. The stress for p++ silicon, LPCVD silicon dioxide, and LPCVD silicon nitride is measured using an electrostatic technique, that uses silicon microbridges. Silicon membranes with varying thickness of oxide and nitride are characterized for sensitivity. The results confirm a previously reported analytical scaling theory for the structures. Based on this theory, scaled experimental devices are found to show sensitivities within three percent of the calculated design targets.Keywords
This publication has 7 references indexed in Scilit:
- Mechanical property measurements of thin films using load-deflection of composite rectangular membranePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A novel technique and structure for the measurement of intrinsic stress and Young's modulus of thin filmsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- An ultrasensitive silicon pressure-based flowmeterPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A new silicon-on-glass process for integrated sensorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- An ultraminiature solid-state pressure sensor for a cardiovascular catheterIEEE Transactions on Electron Devices, 1988
- Scaling limits in batch-fabricated silicon pressure sensorsIEEE Transactions on Electron Devices, 1987
- Pressure sensitivity in anisotropically etched thin-diaphragm pressure sensorsIEEE Transactions on Electron Devices, 1979