The diffusion barrier effect of a vanadium layer in the formation of nickel silicides
- 1 January 1981
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 75 (3) , 247-252
- https://doi.org/10.1016/0040-6090(81)90403-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Influence of the nature of the Si substrate on nickel silicide formed from thin Ni filmsThin Solid Films, 1976
- Structure and growth kinetics of Ni2Si on siliconThin Solid Films, 1975
- Identification of the dominant diffusing species in silicide formationApplied Physics Letters, 1974
- Kinetics of silicide formation by thin films of V on Si and SiO2 substratesJournal of Applied Physics, 1974
- Formation of vanadium silicides by the interactions of V with bare and oxidized Si wafersApplied Physics Letters, 1973