Surface morphology of cubic SiC(100) grown on Si(100) by chemical vapor deposition
- 1 December 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 78 (3) , 538-544
- https://doi.org/10.1016/0022-0248(86)90158-2
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 11 references indexed in Scilit:
- Si(001)-2×1 Single-Domain Structure Obtained by High Temperature AnnealingJapanese Journal of Applied Physics, 1986
- Molecular beam epitaxial growth of GaAs on Si(211)Journal of Applied Physics, 1985
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984
- Molecular beam epitaxial growth of GaP on SiJournal of Applied Physics, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende-on-diamond systemsApplied Physics Letters, 1980
- Antiphase domain structures in GaP and GaAs epitaxial layers grown on Si and GeJournal of Crystal Growth, 1977
- High-field transport in wide-band-gap semiconductorsPhysical Review B, 1975
- Growth mechanism of polycrystalline β-SiC layers on silicon substrateApplied Physics Letters, 1972
- Avalanche Breakdown in Epitaxial SiC p-n JunctionsJournal of Applied Physics, 1969