Heavily Si-doped GaAs grown by metalorganic chemical vapor deposition
- 1 November 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (9) , 4692-4695
- https://doi.org/10.1063/1.341253
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Disilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAsApplied Physics Letters, 1984
- H2Se “memory effects” upon doping profiles in GaAs grown by metalorganic chemical vapor deposition (MO-CVD)Journal of Electronic Materials, 1984
- Tin Doping of Gallium Arsenide by Metal Organic Chemical Vapor Deposition (MOCVD)Journal of the Electrochemical Society, 1983
- Unexpectedly high energy photoluminescence of highly Si doped GaAs grown by MOVPEJournal of Crystal Growth, 1982
- Electron mobility in n-type GaAs at 77 K: Determination of the compensation ratioJournal of Applied Physics, 1982
- Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine methodJournal of Crystal Growth, 1979
- A New Method for Growing GaAs Epilayers by Low Pressure OrganometallicsJournal of the Electrochemical Society, 1979
- The pyrolysis of disilane and rate constants of silene insertion reactionsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1971
- The pyrolysis of monosilaneProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1966
- Lattice Absorption in Gallium ArsenideJournal of Applied Physics, 1961