A Discussion of the Role of Distributed Effects in Latch-Up
- 1 January 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 28 (6) , 4292-4294
- https://doi.org/10.1109/tns.1981.4335715
Abstract
Latch-up in monolithic integrated circuits is caused by the activation of four-layer SCR paths in certain technologies, in particular, bulk CMOS. A lumped element cross-coupled bipolar model has been widely used to discuss this parasitic SCR action with reasonable success. However, in the push toward VLSI structures, latch-up modeling and prediction based upon the simple model has proven inadequate. The deviations can be explained by an extension of the model into a network that couples parallel paths and by ensuring that measured parameters for the model reflect those of the latch-up situation. This paper discusses these points to allow the continued use of the lumped model in latch-up studies.Keywords
This publication has 3 references indexed in Scilit:
- Latch-Up Elimination in Bulk CMOS LSI CircuitsIEEE Transactions on Nuclear Science, 1980
- Neutron Irradiation for Prevention of Latch-Up in MOS Integrated CircuitsIEEE Transactions on Nuclear Science, 1979
- Prevention of CMOS Latch-Up by Gold DopingIEEE Transactions on Nuclear Science, 1976