Residual stress in GaN epilayers grown on silicon substrates
- 1 May 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 18 (3) , 965-967
- https://doi.org/10.1116/1.582284
Abstract
GaN films on AlN buffer layers were grown on (111) silicon substrates in a vertical rotating disk metal–organic chemical-vapor deposition reactor (CVD, Inc.). The dependence of residual stress in GaN films on the V/III molar flow ratio was studied. The crystalline quality of GaN films was analyzed by x-ray diffractometry, and the x-ray lattice parameter method was used to determine the residual stress in the films by measuring the c-axis and a-axis strain separately. The x-ray results show that the residual stress decreases with an increasing V/III molar flow ratio if all other growth parameters are kept constant.Keywords
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