Strain dependence of p-i-n hydrogenated amorphous silicon junctions

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Abstract
The effects of mechanical strain on the electrical properties of p‐i‐n hydrogenated amorphous silicon junction devices were investigated. When strain was applied parallel to the junction plane, both the forward and reverse currents increased with increasing compressive strain and decreased with increasing tensile strain. The ratio for change in current was 8% under the strain of 7.5×10−4, and the strain sensitivity was as large as that in the piezoresistance effect of crystalline silicon. The strain dependence is due to a change in carrier concentration induced by a displacement of energy band and a change in carrier lifetime.