Piezoresistive Effect of Hydrogenated Microcrystalline Silicon Prepared by Plasma- and Photo-Chemical Vapor Deposition

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Abstract
The piezoresistive effect of hydrogenated microcrystalline silicon (µc-Si: H) prepared by plasma- and photo-chemical vapor deposition (CVD) was measured, and the stability of µc-Si: H on the gauge factor was studied. The gauge factors of doped µc-Si: H prepared by plasma-CVD were found to be -25 ∼ -40 and 16∼23 for n- and p-type, respectively. As the rf power during the preparation was increased, the measured gauge factor increased for both n- and p-type. The photolysis process was also used to deposit highly conductive µc-Si: H films, and the gauge factor of the films was improved to -61 for n-type and 43 for p-type. A degradation of the gauge factor was observed when the films prepared by both processes were annealed, but the resulting gauge factor for the photo-CVD films was still larger after 8 hours' annealing.