Nanotechnology goals and challenges for electronic applications

Abstract
Si metal-oxide-semiconductor field-effect transistor (MOSFET) scaling trends are presented along with a description of today's 0.13-/spl mu/m generation transistors. Some of the foreseen limits to future scaling include increased subthreshold leakage, increased gate oxide leakage, increased transistor parameter variability and interconnect density and performance. Basic device and circuit requirements for electronic logic and memory products are described. These requirements need to be kept in mind when evaluating nanotechnology options such as carbon nanotube field-effect transistors (FETs), nanowire FETs, single electron transistors and molecular devices as possible future replacements for Si MOSFETs.

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