Planar channeling in ion-implated silicon
- 16 October 1974
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 25 (2) , K151-K154
- https://doi.org/10.1002/pssa.2210250260
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Channeling and dechanneling of ion-implanted phosphorus in siliconJournal of Applied Physics, 1973
- On the measurement of semiconductor carrier concentration profilesJournal of Physics E: Scientific Instruments, 1972
- An instrument for the rapid determination of semiconductor impurity profilesJournal of Physics E: Scientific Instruments, 1971
- Implantation profiles of 32P channeled into silicon crystalsCanadian Journal of Physics, 1968