On the measurement of semiconductor carrier concentration profiles
- 1 March 1972
- journal article
- Published by IOP Publishing in Journal of Physics E: Scientific Instruments
- Vol. 5 (3) , 241-242
- https://doi.org/10.1088/0022-3735/5/3/017
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Diode edge effect on doping-profile measurementsIEEE Transactions on Electron Devices, 1970
- A Mercury Contact Probe for MOS Measurements on Oxidized SiliconReview of Scientific Instruments, 1970
- The influence of doping fluctuations on limited space-charge accumulation in n-type gallium arsenidePhysics Letters A, 1968
- The effect of surface treatment on gallium arsenide Schottky barrier diodesSolid-State Electronics, 1968
- Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier SystemJournal of Applied Physics, 1963