A high performance polysilicon TFT using RTA and plasma hydrogenation applicable to highly stable SRAMs of 16 Mbit and beyond
- 2 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Hot-Carrier Induced Ion/ioff Improvement of Offset Pmos TFTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1991
- A 0.1/spl mu/A standby current, bouncing-noise-immune 1Mb SRAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1988
- Hall Mobility in Chemically Deposited Polycrystalline SiliconJournal of Applied Physics, 1971