Annealing Studies of Visible Light Emission from Silicon Nanocrystals Produced by Implantation
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Visible photoluminescence from silicon-backbone polymersPhysical Review B, 1995
- Luminescence properties of a cubic silicon cluster octasilacubanePhysical Review B, 1995
- Ion Beam Synthesis of Luminescent SI and GE Nanocrystals in a Silicon Dioxide MatrixMRS Proceedings, 1993
- Theoretical calculation of the electron-capture cross section due to a dangling bond at the Si(111)-interfacePhysical Review B, 1991
- Dissociation kinetics of hydrogen-passivated (111) Si-interface defectsPhysical Review B, 1990
- Models of Si-SiO2interface reactionsSemiconductor Science and Technology, 1989
- Modification of SiO through room-temperature plasma treatments, rapid thermal annealings, and laser irradiation in a nonoxidizing atmospherePhysical Review B, 1988
- High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen SegregationMRS Proceedings, 1987
- Annealing characteristics of Si-rich SiO2 filmsApplied Physics Letters, 1985
- Preparation and Some Properties of Chemically Vapor‐Deposited Si‐Rich SiO2 and Si3 N 4 FilmsJournal of the Electrochemical Society, 1978