A conceptual model of a single-event gate-rupture in power MOSFETs

Open Access

2 December 1993

journal article
research article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 40 (6) , 1959-1966
https://doi.org/10.1109/23.273457

Abstract

A physical model of hole-collection following a heavy-ion strike is proposed to explain the development of oxide fields sufficient to cause single-event gate rupture in power MOSFET's. It is found that the size of the maximum field and the time at which it is attained are strongly affected by the hole mobility.

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