Simulating single-event burnout of n-channel power MOSFET's
- 1 May 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (5) , 1001-1008
- https://doi.org/10.1109/16.210211
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Temperature dependence of single-event burnout in n-channel power MOSFETs (for space application)IEEE Transactions on Nuclear Science, 1992
- Single-event burnout of power bipolar junction transistorsIEEE Transactions on Nuclear Science, 1991
- Features of the triggering mechanism for single event burnout of power MOSFETsIEEE Transactions on Nuclear Science, 1989
- Analytical Model for Single Event Burnout of Power MOSFETsIEEE Transactions on Nuclear Science, 1987
- Burnout of Power MOS Transistors with Heavy Ions of Californium-252IEEE Transactions on Nuclear Science, 1986