Temperature dependence of single-event burnout in n-channel power MOSFETs (for space application)
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 39 (6) , 1605-1612
- https://doi.org/10.1109/23.211342
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Development of cosmic ray hardened power MOSFET'sIEEE Transactions on Nuclear Science, 1989
- First Nondestructive Measurements of Power MOSFET Single Event Burnout Cross SectionsIEEE Transactions on Nuclear Science, 1987
- Analytical Model for Single Event Burnout of Power MOSFETsIEEE Transactions on Nuclear Science, 1987
- Burnout of Power MOS Transistors with Heavy Ions of Californium-252IEEE Transactions on Nuclear Science, 1986
- TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORSApplied Physics Letters, 1966