A reassessment of standard rate equations for low facet reflectivity semiconductor lasers using traveling wave rate equations
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 28 (12) , 2706-2713
- https://doi.org/10.1109/3.166463
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Very low threshold single quantum well graded-index separate confinement heterostructure InGaAs/InGaAsP lasers grown by chemical beam epitaxyApplied Physics Letters, 1991
- Extremely low threshold current strained InGaAs/AlGaAs lasers by molecular beam epitaxyApplied Physics Letters, 1991
- Submilliamp threshold InGaAs-GaAs strained layer quantum-well laserIEEE Journal of Quantum Electronics, 1990
- Two-level description of gain and mixing susceptibilities in amplifying semiconductor materialsIEEE Journal of Quantum Electronics, 1988
- A travelling-wave rate equation analysis for semiconductor lasersSolid-State Electronics, 1987
- Longitudinal analysis of semiconductor lasers with low reflectivity facetsIEEE Journal of Quantum Electronics, 1985
- Power characteristics of single-mode semiconductor lasersJournal of Applied Physics, 1984
- Extremely low threshold (AlGa)As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1982
- Homogeneously broadened CW lasers with uniform distributed lossIEEE Journal of Quantum Electronics, 1978
- Saturation Effects in High-Gain LasersJournal of Applied Physics, 1965