Schottky barrier height of sputtered HfN contacts on silicon
- 31 August 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (8) , 775-777
- https://doi.org/10.1016/0038-1101(85)90063-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Schottky barrier height of sputtered TiN contacts on siliconSolid-State Electronics, 1984
- Characteristics of dc magnetron, reactively sputtered TiNx films for diffusion barriers in III–V semiconductor metallizationJournal of Vacuum Science & Technology A, 1984
- Contact resistivity of TiN on p+-Si and n+-SiSolar Cells, 1983
- Titanium nitride Schottky-barrier contacts to GaAsApplied Physics Letters, 1983
- Thermal Stability of Hafnium and Titanium Nitride Diffusion Barriers in Multilayer Contacts to SiliconJournal of the Electrochemical Society, 1983
- TiN and TaN as diffusion barriers in metallizations to silicon semiconductor devicesApplied Physics Letters, 1980
- A modified forward I-V plot for Schottky diodes with high series resistanceJournal of Applied Physics, 1979
- 2.2 Substrate surface damages by rf-sputteringVacuum, 1977
- The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodesSolid-State Electronics, 1976