Low-Temperature Thermal Oxidation of Silicon in N2O by UV-Irradiation
- 1 August 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (8A) , L1453
- https://doi.org/10.1143/jjap.28.l1453
Abstract
A new thermal oxidation method using UV-irradiation has been proposed. Silicon dioxide of 3.5–4.0 nm thickness can be formed in 0.5 h at 200–500°C under N2O flow with UV-irradiation. Oxide formed by the present method is determined to be silicon dioxide. The fixed charge density at the Si/SiO2 interface is relatively low for 500°C oxidation. It is estimated to be about 2×1011 cm-2 without any thermal annealing.Keywords
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