Normal-Pressure and Low-Temperature Thermal Oxidation of Silicon
- 1 November 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (11R) , 1907-1911
- https://doi.org/10.1143/jjap.26.1907
Abstract
A new thermal oxidation method of silicon has been proposed and its feasibility has been demonstrated experimentally. Silicon-dioxide of 7 nm thickness was grown within 24 h at about 250°C by continuously supplying fresh nitric acid to a reaction tube under normal-pressure conditions. Detailed oxidation characteristics as well as the structure of the oxide are described. The oxide/semiconductor interface was changed from accumulation state to inversion state, and vice versa, by an application of the gate voltage. The minimum interface state density after 350°C annealing was about 2×1011 cm-2 eV-1.Keywords
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