Persistent photoconductivity in a-Si:H/a-SiNx:H multilayer films at low temperature
- 16 June 1989
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 113 (2) , K223-K226
- https://doi.org/10.1002/pssa.2211130267
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Anomalous electronic transport effects in a-Si:H/a-SiNx:H multilayers☆Journal of Non-Crystalline Solids, 1985
- Temperature and excitation dependence of the photo-induced excess conductivity in doping modulated amorphous siliconJournal of Non-Crystalline Solids, 1985
- Persistent photoconductivity in doping-modulated amorphous silicon superlatticesJournal of Non-Crystalline Solids, 1985
- Persistent photoconductivity inlayered structuresPhysical Review B, 1985
- Persistent Photoconductivity in Doping-Modulated Amorphous SemiconductorsPhysical Review Letters, 1984
- Carrier Recombination Times in Amorphous-Silicon Doping SuperlatticesPhysical Review Letters, 1984
- Charge transfer doping in amorphous semiconductor superlatticesApplied Physics Letters, 1984
- Field-effect phenomena in hydrogenated amorphous silicon photoreceptorsJournal of Applied Physics, 1984
- Persistent photoconductivity and dangling bonds in amorphous germaniumPhysics Letters A, 1980
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977