A 6ns 4Kb bipolar RAM using switched load resistor memory cell
- 1 January 1979
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A high-speed low-power 4096 x 1 bit bipolar RAMIEEE Journal of Solid-State Circuits, 1978
- A 4096 x 1 static bipolar RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- A 1024-bit ECL RAM with 15-ns access timePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1976