Stress variation in epitaxial GaAs films on silicon under thermal treatment
- 1 September 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 190 (2) , 279-286
- https://doi.org/10.1016/0040-6090(89)90917-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Growth of GaAs and InP on Si using plasma stimulated MOCVDJournal of Crystal Growth, 1989
- Controlled Formation of Misfit Dislocations for Heteroepitaxial Growth of GaAs on (100) Si by Migration-Enhanced EpitaxyJapanese Journal of Applied Physics, 1988
- Rhombohedral distortion of EuS epitaxial films on Si(111) substratesThin Solid Films, 1987
- Epitaxial growth and material properties of GaAs on Si grown by MOCVDJournal of Crystal Growth, 1986
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978
- Precision lattice constant determinationActa Crystallographica, 1960