High Quality GaAs on Soi by MOCVD
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Improvement of Minority-Carrier Properties of GaAs on SiMRS Proceedings, 1989
- Molecular-beam epitaxial growth and microstructural characterization of GaAs on Si with a buried implanted oxideJournal of Applied Physics, 1988
- Interactions of dislocations in GaAs grown on Si substrates with InGaAs-GaAsP strained layered superlatticesJournal of Applied Physics, 1988
- Antiphase domains in GaAs grown by metalorganic chemical vapor deposition on silicon-on-insulatorJournal of Applied Physics, 1988
- Thickness dependence of material quality in GaAs-on-Si grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1988
- Characterization of GaAs grown by metalorganic chemical vapor deposition on Si-on-insulatorApplied Physics Letters, 1987