The structure of epitaxially grown thin films: a study of niobium on sapphire
- 14 September 1998
- journal article
- letter
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 10 (36) , L631-L637
- https://doi.org/10.1088/0953-8984/10/36/001
Abstract
The x-ray scattering from epitaxially grown films of niobium on sapphire has been measured as the thickness of niobium was varied. For thicknesses d larger than 80 Å, the mean square displacements perpendicular to the growth planes increase as where , and the correlation length for these displacements increases as with . A model is put forward to account for these results in terms of the strains when the film thickness is larger than the distance between the misfit dislocations.Keywords
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