Growth kinetics and properties of heteroepitaxial ZnTe films grown by metalorganic molecular beam epitaxy
- 28 September 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (13) , 1534-1536
- https://doi.org/10.1063/1.107539
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Quantum well waveguide intensity modulator at visible wavelengths using CdZnTe/ZnTe quantum wellsApplied Physics Letters, 1991
- MBE growth of the (Zn,Cd)(Se,Te) system for wide-bandgap heterostructure lasersSemiconductor Science and Technology, 1991
- HgZnTe for very long wavelength infrared applicationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Characterization of CdTe, HgTe, and Hg1−xCdxTe grown by chemical beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Photoluminescence of ZnTe homoepitaxial layers grown by metalorganic vapor-phase epitaxy at low pressureJournal of Applied Physics, 1989
- Effects of Zn to Te ratio on the molecular-beam epitaxial growth of ZnTe on GaAsJournal of Applied Physics, 1988
- Growth and characterization of CdMnTe and CdZnTe polycrystalline thin films for solar cellsSolar Cells, 1988
- Photoluminescence properties of ZnTe-ZnSe superlattices grown by hot-wall epitaxyJournal of Luminescence, 1988
- ZnSe-ZnTe strained-layer superlattices: A novel material for the future optoelectronic devicesJournal of Crystal Growth, 1988
- The nature of the predominant acceptors in high quality zinc tellurideJournal of Luminescence, 1978