ZnSe-ZnTe strained-layer superlattices: A novel material for the future optoelectronic devices
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 86 (1-4) , 290-295
- https://doi.org/10.1016/0022-0248(90)90732-z
Abstract
No abstract availableKeywords
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