On bistable behavior and open-base breakdown of bipolar transistors in the avalanche regime-modeling and applications
- 1 June 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (6) , 1398-1409
- https://doi.org/10.1109/16.137320
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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