Modeling oxide thickness dependence of charging damage by plasma processing
- 1 November 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (11) , 509-511
- https://doi.org/10.1109/55.257998
Abstract
Develops a quantitative model for thin oxide plasma charging damage by examining the oxide thickness dependence of charging current. The current is deduced from capacitance-voltage (CV) curves of metal-oxide-semiconductor (MOS) capacitors after plasma etch. The model predicts the oxide thickness dependence of plasma charging successfully. It is shown that plasma acting on a very thin oxide during processing may be modeled as essentially a current source. Thus the damage will not be greatly exacerbated as oxide thickness is further reduced in the future. Gate oxide breakdown voltage distribution of MOS capacitors after plasma processing can be predicted accurately from that of a control wafer by using a defect-induced breakdown model.<>Keywords
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