Identification and activation energies of shallow donors in cubic SiC
- 1 August 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (3) , 1805-1809
- https://doi.org/10.1063/1.354785
Abstract
Silicon carbide grown by the chemical vapor deposition process on silicon often contains high concentrations of nitrogen donors with a binding energy of 54 meV as determined from photoluminescence studies. In contrast, the conductivity in the same samples is dominated by a heavily compensated shallow donor with a binding energy below 20 meV. The conventional view is that these two donors are the same. The 54 meV donors usually are assumed to be isolated substitutional nitrogen in regions of low concentration while the <20 meV donors are believed to be nitrogen in regions of high concentration. The most convincing evidence for this identification is the continuum of binding energies from 50 to 15 meV for SiC as a function of donor concentration compiled from published results. Evidence for reassessing the conventional view is given in this article and several experiments supporting the conventional view are reconsidered. As a result of this reconsideration, we propose that the donors below 20 meV which dominate the conductivity are not neutral, substitutional nitrogen in high concentration but some other center. D− centers and donor complexes are possible origins of this donor. The D− center appears to have many of the characteristics required for satisfactory modeling of this material.This publication has 17 references indexed in Scilit:
- Temperature dependence of Hall effect in arsenic-doped silicon at intermediate dopant densityApplied Physics Letters, 1988
- Donor binding energies determined from temperature dependence of photoluminescence spectra in undoped and aluminum-doped beta SiC filmsApplied Physics Letters, 1988
- Temperature dependence of electrical properties of n- and p-type 3C-SiCJournal of Applied Physics, 1987
- Residual Donors in P-SiC FilmsMRS Proceedings, 1987
- Compensation in epitaxial cubic SiC filmsApplied Physics Letters, 1986
- Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor depositionApplied Physics Letters, 1986
- Electron cyclotron resonance in cubic SiCSolid State Communications, 1985
- The location and shape of the conduction band minima in cubic silicon carbideJournal of Luminescence, 1977
- Variation of impurity−to−band activation energies with impurity densityJournal of Applied Physics, 1975
- Compensation Dependence of Impurity Conduction in Antimony-Doped GermaniumPhysical Review B, 1965