Energy-dependant cyclotron mass in InAs/AlSb quantum wells
- 1 September 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (9) , 1580-1583
- https://doi.org/10.1088/0268-1242/9/9/002
Abstract
The influence of conduction band non-parabolicity on the cyclotron resonance of a two-dimensional electron system in InAs quantum wells is investigated. We demonstrate that the experimentally determined dependence of the cyclotron mass on the carrier density in the well can be excellently described using a two-band k.p model. In contrast to previously studied systems our experimental results allow us to deduce quantitatively the quantization energy of the first electrical subband for wells of different width.Keywords
This publication has 13 references indexed in Scilit:
- Photoconductivity in AlSb/InAs quantum wellsSemiconductor Science and Technology, 1993
- Improved charge control and the frequency performance in InAs/AlSb HFET'sIEEE Transactions on Electron Devices, 1993
- InAs/AlSb/GaSb single-barrier interband tunneling diodes with high peak-to-valley ratios at room temperatureJournal of Applied Physics, 1990
- Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interfaceJournal of Applied Physics, 1990
- Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wellsJournal of Applied Physics, 1989
- Cyclotron and spin resonance in electron inversion layers on InSbPhysical Review B, 1986
- Theory of optical transitions in inversion layers of narrow-gap semiconductorsJournal of Physics C: Solid State Physics, 1983
- Theoretical investigations of superlattice band structure in the envelope-function approximationPhysical Review B, 1982
- The nonparabolicity parallel excitation mechanism and doublet peak problem in subband resonanceSurface Science, 1982
- Electronic Properties of Flat-Band Semiconductor HeterostructuresPhysical Review Letters, 1981