Photoconductivity in AlSb/InAs quantum wells
- 1 January 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (1S) , S137-S140
- https://doi.org/10.1088/0268-1242/8/1s/031
Abstract
Measuring photoconductivity at low temperatures, the authors investigate the recently observed bipolar behaviour of the persistent photoeffect in InAs/AlSb quantum wells. Depending upon the incident wavelength they observe either a persistent increase or a persistent decrease of the carrier density in the well. They discuss their experimental findings in terms of a simple model based on the band structure as known to date and the growth parameters of the heterostructure.Keywords
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