Impact of CMOS technology scaling on the atmospheric neutron soft error rate
Top Cited Papers
- 1 December 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 47 (6) , 2586-2594
- https://doi.org/10.1109/23.903813
Abstract
We investigated scaling of the atmospheric neutron soft error rate (SER) which affects reliability of CMOS circuits at ground level and airplane flight altitudes. We considered CMOS circuits manufactured in a bulk process with a lightly-doped p-type wafer. One method, based on the empirical model, predicts a linear decrease of SER per bit with decreasing feature size L/sub G/. A different method, based on the MBGR model, predicts even faster decrease of SER per bit than linear. If the increasing number of bits is taken into account, then the SER per chip is not expected to increase faster than linearly with decreasing L/sub G/.Keywords
This publication has 22 references indexed in Scilit:
- Cosmic-ray soft error rate characterization of a standard 0.6-/spl mu/m CMOS processIEEE Journal of Solid-State Circuits, 2000
- Simple method for estimating neutron-induced soft error rates based on modified BGR modelIEEE Electron Device Letters, 1999
- Extensions of the burst generation rate method for wider application to proton/neutron-induced single event effectsIEEE Transactions on Nuclear Science, 1998
- IBM experiments in soft fails in computer electronics (1978–1994)IBM Journal of Research and Development, 1996
- Single event upset and charge collection measurements using high energy protons and neutronsIEEE Transactions on Nuclear Science, 1994
- Single event phenomena in atmospheric neutron environmentsIEEE Transactions on Nuclear Science, 1993
- Soft-error-rate improvement in advanced BiCMOS SRAMsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Calculation of Cosmic-Ray Induced Soft Upsets and Scaling in VLSI DevicesIEEE Transactions on Nuclear Science, 1982
- Effect of CMOS Miniaturization on Cosmic-Ray-Induced Error RateIEEE Transactions on Nuclear Science, 1982
- Minimum Size and Maximum Packing Density of Nonredundant Semiconductor DevicesProceedings of the IRE, 1962