Kinetics of Accumulation of Radiation Defects and Annihilation of Vacancies and Interstitials in Carbon- and Boron-Containing Silicon
- 16 July 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 72 (1) , 61-68
- https://doi.org/10.1002/pssa.2210720103
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Carbon interstitial in electron-irradiated siliconSolid State Communications, 1977
- Interstitial defects involving carbon in irradiated siliconJournal of Physics C: Solid State Physics, 1975
- Interstitial defects involving boron in irradiated siliconJournal of Physics C: Solid State Physics, 1975
- Electron irradiation damage in silicon containing carbon and oxygenJournal of Physics and Chemistry of Solids, 1970
- Improvement in the detection of oxygen in silicon by infra-red absorptionSolid-State Electronics, 1969