Optical waveguides in ion-implanted ZnTe
- 1 June 1975
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (6) , 2731-2732
- https://doi.org/10.1063/1.321946
Abstract
Two‐dimensional optical waveguides have been implanted in a compound semiconductor, zinc telluride (ZnTe), using protons and boron ions. Propagation constants of Te0 and TM0 modes have been measured for several doses of implantation, in the visible (λ=6328 Å). Losses in the range 1–3 dB/cm are observed in these first experiments, without any thermal annealing.This publication has 12 references indexed in Scilit:
- Optical waveguides in single layers of Ga1−xAlx As grown on GaAs substratesApplied Physics Letters, 1973
- Optical waveguides in GaAs–AlGaAs epitaxial layersJournal of Applied Physics, 1973
- Acoustooptic deflection materials and techniquesProceedings of the IEEE, 1973
- Growth of three-dimensional dielectric waveguides for integrated optics by molecular-beam-epitaxy methodApplied Physics Letters, 1972
- Optical waveguides by diffusion in II-VI compoundsApplied Physics Letters, 1972
- Fabrication of single-crystal semiconductor optical waveguides by solid-state diffusionApplied Physics Letters, 1972
- Optical waveguiding in proton-implanted GaAsApplied Physics Letters, 1972
- Electrical Transport and Photoelectronic Properties of ZnTe:Al CrystalsJournal of Applied Physics, 1972
- Electrooptic Light ModulatorsApplied Optics, 1966
- Linear Electro-Optic Effect and Refractive Indices of Cubic ZnTe*Journal of the Optical Society of America, 1966