60 Gbit/s regenerating demultiplexer in SiGe bipolartechnology
- 6 November 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (23) , 1984-1986
- https://doi.org/10.1049/el:19971354
Abstract
A 1:2 demultiplexer is presented which operates at up to 60 Gbit/s. This data rate is a record value for all ICs in any technology and has so far only been achieved by a time-division multiplexer recently presented by the authors . The IC, which was fabricated in an SiGe bipolar technology and mounted on a simple measuring socket, is also well suited for retiming data streams, e.g. in the receiver of future fibre optic transmission systems.Keywords
This publication has 4 references indexed in Scilit:
- A 22 Gb/s decision circuit and a 32 Gb/s regenerating demultiplexer IC fabricated in silicon bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 60 Gbit/s time-division multiplexer in SiGe-bipolartechnology with special regard to mounting and measuring techniqueElectronics Letters, 1997
- Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/sIEEE Journal of Solid-State Circuits, 1996
- 46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technologyIEEE Journal of Solid-State Circuits, 1996