Excimer laser-induced doping of crystalline silicon carbide films
- 1 November 1995
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 10 (11) , 2723-2727
- https://doi.org/10.1557/jmr.1995.2723
Abstract
0.25 μm thick, single crystal, n-type, silicon carbide (β-SiC) films thermally grown on p-type Si(100) were doped with boron by using KrF excimer laser radiation and a spin-on dopant with a boron concentration of 1020/cm3. The threshold fluence for the doping to occur was approximately 0.08 J/cm2. Similarly, p-SiC/n-SiC diodes were fabricated by laser-induced doping of single-crystal β-SiC (n-type, 6 μm thick) films on n-type Si(100). The diodes obtained at 0.25 J/cm2 showed good rectifying characteristics. The threshold fluence for surface modification and/or ablation was approximately 0.3 J/cm2, indicating that doping and diode formation have to be accomplished within the fluence window of 0.08 J/cm2-0.3 J/cm2 for these films.Keywords
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