Diffusion of nitrogen into silicon carbide single crystals doped with aluminum
- 31 December 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (11-12) , 1125-1134
- https://doi.org/10.1016/0038-1101(66)90137-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Self-Diffusion in Silicon CarbidePhysical Review B, 1966
- Growth Studies of Silicon Carbide CrystalsJournal of the Electrochemical Society, 1966
- A modified thermoelectric method for determining the conductivity type of high resistivity silicon carbide crystalsSolid-State Electronics, 1965
- Nature of Rectifying Junctions in α-Silicon CarbideJournal of Applied Physics, 1965
- Nitrogen Incorporation in SiCThe Journal of Chemical Physics, 1965
- Absorption of Light in Alpha SiC near the Band EdgePhysical Review B, 1957