Structural and electrical properties of BaTiO3 thin films grown on p-InSb substrate by metalorganic chemical vapor deposition at low temperature

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Abstract
Metalorganic chemical vapor deposition of BaTiO3 on p‐InSb (111) using Ba(tmhd)2, Ti(OC3H7)4, and N2O via pyrolysis at low (∼300 °C) temperature was performed to produce high‐quality BaTiO3/p‐InSb (111) interfaces and BaTiO3 insulator gates with dielectric constants of high magnitude. Raman spectroscopy showed the optical phonon modes of a BaTiO3 thin film. The stoichiometry of the BaTiO3 film was investigated by Auger electron spectroscopy. Transmission electron microscopy showed that the BaTiO3 films had local epitaxial formations. Room‐temperature capacitance‐voltage measurements clearly revealed metal‐insulator‐semiconductor behavior for the samples with the BaTiO3 insulator gates, and the interface state densities at the BaTiO3/p‐InSb interfaces were approximately high 1011 eV−1 cm−2 at the middle of the InSb energy gap. The dielectric constant determined from the capacitance‐voltage measurements was as large as 743. These results indicate that the BaTiO3 layers grown at low temperature can be used for both high‐density dynamic‐memory and high‐speed applications.